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DMN2100UDM
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* Low On-Resistance * 55 m @ VGS = 4.5V * 70 m @ VGS = 2.5V * 90 m @ VGS = 1.8V * 130 m @ VGS = 1.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standard for High Reliability
D1
Mechanical Data
* * * * * * * * Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.015 grams (approximate)
NEW PRODUCT
* * * * * * *
6
SOT-26
5 S1 4 D2
D
D
S
G1 1
ESD PROTECTED
S2 2 G2 3 TOP VIEW
D
D TOP VIEW
G
Internal Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value 20 8 3.3 13 Units V V A A
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1)
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 900 139 -55 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) Min 20 0.6 Typ 32 43 56 80 8 0.7 555 112 84 Max 1 1 1.0 55 70 90 130 1.1 Unit V A A V Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 1.5A VGS = 1.5V, ID = 1.0A VDS =10V, ID = 6A VGS = 0V, IS = 2A VDS = 10V, VGS = 0V f = 1.0MHz
Static Drain-Source On-Resistance
RDS (ON)
m
Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes:
|Yfs| VSD Ciss Coss Crss
S V pF pF pF
1. Device mounted on FR-4 PCB, or minimum recommended pad layout with 2oz. copper pads. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect.
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
1 of 4 www.diodes.com
January 2009
(c) Diodes Incorporated
DMN2100UDM
10
10 9
VDS = 5V Pulsed
8
ID , DRAIN CURRENT (A)
8 7 6 5 4 3 2 1
TA = 150C TA = 85C T A = 25C TA = -55C
6
NEW PRODUCT
4
2
0
0 0.5
1 1.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
2
1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
1.6
1.4
1.2
VGS = 1.8V VGS = 1.5V
0.1
1.0
VGS = 2.5V
0.8
0.01 0.01
0.6
0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
1.0 VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.8
ID = 250A
Ciss
0.6
C CAPACITANCE (pF)
Coss
0.4
Crss
0.2
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature
0 -50
0
5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance
20
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
2 of 4 www.diodes.com
January 2009
(c) Diodes Incorporated
DMN2100UDM
10
1 IS, SOURCE CURRENT (A)
TA = 150C
0.1
TA = 125C TA = 85C
NEW PRODUCT
0.01
TA = 25C
0.001
TA = -55C
0.0001 0
0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Ordering Information
Part Number DMN2100UDM-7
Notes:
(Note 5) Case SOT-26 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2N1 = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September)
2N1
Date Code Key Year Code Month Code Jan 1
2007 U Feb 2 Mar 3
2008 V Apr 4 May 5
YM
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
Package Outline Dimensions
A
BC
H K M
J
D
L
SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0 8 All Dimensions in mm
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
3 of 4 www.diodes.com
January 2009
(c) Diodes Incorporated
DMN2100UDM Suggested Pad Layout
C2 C2
NEW PRODUCT
Z
G
C1
Y X
Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
4 of 4 www.diodes.com
January 2009
(c) Diodes Incorporated

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